Thickness and Growth Temperature Dependence of Structure and Magnetism in FePt Thin Films Michael F. Toney[a], Wen-Yaung Lee[b], Jonathan A. Hedstrom and Andrew Kellock

نویسندگان

  • Michael F. Toney
  • Wen - Yaung Lee
  • A. Hedstrom
  • Andrew Kellock
چکیده

We describe structural and magnetic measurements of polycrystalline, L10 chemical-ordered Fe(55-60)Pt(45-40) lms as a function of lm thickness (from 3 to 13 nm) and growth temperature (270 370 C). With increasing lm thickness, the coercivity increases from about 1 kOe up to 11 kOe (growth at 400C), while for increasing growth temperature, the coercivity grows from 0.2 to 6 kOe for 4.3 nm thick lms and 1.6 to 10 kOe for 8.5 nm thick lms. There is a strong, nearly linear correlation between coercivity and the extent of L10 chemical order. In all the lms there is a mixture of L10 and chemically disordered, fcc phases. The grain size in the L10 phase increases with both lm thickness and growth temperature (increasing chemical order), while in the fcc phase the grain size remains nearly constant and is smaller than in the L10 phase. The lms all contain twins and stacking faults. The relationship between the coercivity and the lm structure is discussed and we give a possible mechanism for the lack of chemical order in the very thin lms (lack of nucleation sites for the L10 phase). PACS numbers: 75.50.SS, 75.50.Vv, 68.55.Jk, 61.10.Nz Electronic address: [email protected]

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Effect of Thickness on Properties of Copper Thin Films Growth on Glass by DC Planar Magnetron Sputtering

Copper thin films with nano-scale structure have numerous applications in modern technology.  In this work, Cu thin films with different thicknesses from 50–220 nm have been deposited on glass substrate by DC magnetron sputtering technique at room temperature in pure Ar gas. The sputtering time was considered in 4, 8, 12 and 16 min, respectively. The thickness effect on the structural, mo...

متن کامل

Nano-structural Characterization of Post-annealed ZnO Thin Films by X-ray Diffraction and Field Emission Scanning Electron Microscopy

ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...

متن کامل

Dependence of Nanostructure and the Optical Properties of Ni Thin Films with Different Thicknesses on the Substrate Temperature

Nickel films with the thicknesses of 30 and 120 nm were deposited on glass substrates, at different substrate temperatures (313 to 600 K) under uhv condition. The nano-structure of the films and mean diameter of grains was obtained for each films using atomic force microscopy (AFM). Their optical properties were measured by spectrophotometry in the spectral range of 190-2500 nm. Kramers-Kronig ...

متن کامل

Nano-structural Characterization of Post-annealed ZnO Thin Films by X-ray Diffraction and Field Emission Scanning Electron Microscopy

ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...

متن کامل

A study on the dependence of DC electrical properties and nanostructure of Cu thin films on film thickness

This paper reports the correlation between film thickness, nanostructure and DC electrical properties of copper thin films deposited by PVD method on glass substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for crystallography and morphology investigation, respectively. Resistivity was measured by four point probe instrument, while a Hall effects measurement system w...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2003